The buffer layer doesn't show the intrinsic electronic structure of graphene but induces substantial n-doping within the overlying monolayer graphene movie.[17] The principle advantage of epitaxial graphene growth on silicon carbide about other methods is to acquire graphene levels immediately on a semiconducting or semi-insulating substrate which is commercially out https://www.quora.com/profile/Trevor-Flatcher-2/The-Key-Role-of-Silicon-Carbide-in-Electric-Vehicle-Batteries-Electric-vehicles-EVs-have-emerged-as-a-pivotal-solutio